SGL60N90DG3YDTU

SGL60N90DG3YDTU Datasheet

SGL60N90DG3

Part	Datasheet
SGL60N90DG3YDTU	SGL60N90DG3YDTU (pdf)

Related Parts	Information
SGL60N90DG3TU	SGL60N90DG3TU

PDF Datasheet Preview
SGL60N90DG3 SGL60N90DG3 IGBT Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications. • High speed switching • Low saturation voltage VCE sat = V IC = 60A • High input impedance • Built-in fast recovery diode Home appliances, induction heaters, induction heating JARs, and microwave ovens. TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGL60N90DG3 900 ± 25 60 42 120 15 180 72 -55 to +150 -55 to +150 Typ. ---- Max. 25 Units V A W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation SGL60N90DG3 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

PDF Datasheet Preview

SGL60N90DG3

SGL60N90DG3

IGBT

Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.
• High speed switching
• Low saturation voltage VCE sat = V IC = 60A
• High input impedance
• Built-in fast recovery diode

Home appliances, induction heaters, induction heating JARs, and microwave ovens.

TO-264

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 100°C TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGL60N90DG3 900 ± 25 60 42 120 15 180 72
-55 to +150 -55 to +150

Typ. ----

Max. 25

Units V A W °C °C °C

Units °C/W °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGL60N90DG3

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

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Datasheet ID: SGL60N90DG3YDTU 634751