SGL50N60RUFTU

SGL50N60RUFTU Datasheet

SGL50N60RUF

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SGL50N60RUFTU	SGL50N60RUFTU (pdf)

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SGL50N60RUF SGL50N60RUF Short Circuit Rated IGBT IGBT Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature. • Short circuit rated 10us TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage VCE sat = V IC = 50A • High input impedance AC & DC motor controls, general purpose inverters, robotics, and servo controls. TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 TSC PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 100°C TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGL50N60RUF 600 ± 20 80 50 150 10 250 100 -55 to +150 -55 to +150 Typ. --- Max. 25 Units V A us W °C °C °C Units °C/W °C/W 2002 Fairchild Semiconductor Corporation SGL50N60RUF Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA

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SGL50N60RUF

SGL50N60RUF

Short Circuit Rated IGBT

IGBT

Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature.
• Short circuit rated 10us TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage VCE sat = V IC = 50A
• High input impedance

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-264

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 TSC PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 100°C TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes,1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGL50N60RUF 600 ± 20 80 50 150 10 250 100
-55 to +150 -55 to +150

Typ. ---

Max. 25

Units V A us W °C °C °C

Units °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGL50N60RUF

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 250uA

VGE = 0V, IC = 1mA

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Datasheet ID: SGL50N60RUFTU 634749