SFW9640TM
SFW9640TM Datasheet
SFW/I9640
| Part | Datasheet |
|---|---|
SFW9640TM |
SFW9640TM (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET SFW/I9640 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA Max. VDS = -200V Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25oC * Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = -200 V RDS on = ID = -11 A D2-PAK I2-PAK Gate Drain Source Value -200 -11 -44 +_ 30 807 -11 123 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 40 Units oC/W 1999 Fairchild Semiconductor Corporation SFW/I9640 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified |
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