BBY51...
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BBY5102VH6327XTSA1 (pdf) |
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Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment • Pb-free RoHS compliant package BBY51... BBY51-02L BBY51-02V BBY51-02W BBY51-03W BBY51 Type BBY51-02L BBY51-02V BBY51-02W* BBY51-03W * Not for new design Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 Configuration common cathode single, leadless single Marking S3s II f II white H Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Value Unit Storage temperature Tstg 2014-02-11 BBY51... Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHZ Series resistance VR = 1 V, f = 1 GHz CT1/CT4 C1V-C3V pF C3V-C4V 2014-02-11 BBY51... Diode capacitance CT = VR f = 1MHz 10 C T pF EHD07128 Temperature coefficient of the diode capacitance TCc = VR 10 -3 1/°C 10 -4 10 -5 2014-02-11 |
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