BBY5102VH6327XTSA1

BBY5102VH6327XTSA1 Datasheet


BBY51...

Part Datasheet
BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 (pdf)
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Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
• Pb-free RoHS compliant package

BBY51...

BBY51-02L BBY51-02V BBY51-02W BBY51-03W

BBY51

Type BBY51-02L BBY51-02V BBY51-02W* BBY51-03W
* Not for new design

Package SOT23 TSLP-2-1 SC79 SCD80 SOD323

Configuration common cathode single, leadless single

Marking S3s II f II white H

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Value

Unit

Storage temperature

Tstg
2014-02-11

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Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics
- 200

AC Characteristics Diode capacitance

VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz

Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHZ Series resistance VR = 1 V, f = 1 GHz

CT1/CT4

C1V-C3V pF

C3V-C4V
2014-02-11

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Diode capacitance CT = VR f = 1MHz
10 C T pF

EHD07128

Temperature coefficient of the diode capacitance TCc = VR
10 -3
1/°C
10 -4
10 -5
2014-02-11
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Datasheet ID: BBY5102VH6327XTSA1 637617