IPU06N03LB G

IPU06N03LB G Datasheet


IPU06N03LB

Part Datasheet
IPU06N03LB G IPU06N03LB G IPU06N03LB G (pdf)
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Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target applications
• N-channel - Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating RoHS compliant

IPU06N03LB

Product Summary V DS R DS on ,max ID

IPS06N03LB
30 V 50 A

PG-TO251-3-11

PG-TO251-3

Type IPU06N03LB IPS06N03LB

Package

Marking

PG-TO251-3
06N03LB

PG-TO251-3-11 06N03LB

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=50 A, R GS=25
dv /dt

I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1
1 J-STD20 and JESD22

Value 50 200 210
±20 94 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-23

IPU06N03LB

IPS06N03LB
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Datasheet ID: IPU06N03LBG 638256