SFW9530TM
SFW9530TM Datasheet
SFW/I9530
| Part | Datasheet |
|---|---|
SFW9530TM |
SFW9530TM (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET SFW/I9530 n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175oC Operating Temperature n Lower Leakage Current 10 µA Max. VDS = -100V n Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25oC * Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = -100 V RDS on = ID = A D2-PAK I2-PAK Gate Drain Source Value -100 -42 ±30 368 66 - 55 to +175 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 40 Units oC/W SFW/I9530 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified |
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