SFP9640L
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SFP9640L (pdf) |
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Advanced Power MOSFET SFP9640L Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10uA Max. VDS= -200V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = -200 V RDS on = ID = -11 A TO-220 1.Gate Drain Source Value -200 -11 -44 ±20 806 -11 98 - 55 to +150 Units V A V mJ A mJ V/ns W/℃ Typ. -- Max. Units ℃/W SFP9640L N-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS |
More datasheets: M85049/3712W03D | M85049/3710W02D | 59125-010 | 59125-040 | 59125-020 | MDM-15PH003A | 76650-0100 | MDM-25PSK-A174 | BGB 540 E6327 | CNF58 |
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