BGB 540 E6327
BGB 540 E6327 Datasheet
Data sheet, BGB540, Sept. 2002
| Part | Datasheet |
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BGB 540 E6327 |
BGB 540 E6327 (pdf) |
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| Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes Never stop thinking. Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list . Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2002-09-11 Previous Version: 2001-08-16 RF parameters and SPICE model updated Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide see our webpage at Active Biased RF Transistor BGB540 • Gms= 18dB at 1.8GHz • Small SOT343 package • Current easy adjustable by an external resistor • Open collector output • Typical supply voltage 1.4-4.3V • technology • For high gain low noise amplifiers • Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency oscillators Bias,4 Bias NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias ESD Electrostatic discharge sensitive device, observe handling precaution! Type BGB540 Package SOT343 Marking MCs Chip T0559 Data sheet 2002-09-11 BGB540 Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, TS < 75°C1 Junction temperature Ambient temperature Storage temperature Thermal resistance junction-soldering point |
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