SFH9250L
SFH9250L Datasheet
SFH9250L
| Part | Datasheet |
|---|---|
SFH9250L |
SFH9250L (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET SFH9250L Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10uA Max. VDS=-200V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 °C Continuous Drain Current TC=100 °C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 °C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = -200 V RDS on = ID = A TO-3P 1.Gate Drain Source Value -200 -78 ±20 990 204 - 55 to +150 Units V A V mJ A mJ V/ns W/ °C Typ. -- Max. Units °C /W SFH9250L P-CHANNEL POWER MOSFET Electrical Characteristics TC=25°C unless otherwise specified Symbol BVDSS VGS th IGSS IDSS RDS on |
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