SFH9154
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SFH9154 (pdf) |
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Advanced Power MOSFET SFH9154 s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150oC Operating Temperature s Lower Leakage Current 10 µA Max. VDS = -150V s Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = -150 V RDS on = ID = -18 A TO-3P 1.Gate Drain Source Value -150 -18 -72 ±30 1215 -18 204 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Typ. -- Max. Units oC/W SFH9154 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS |
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