SFF9250L

SFF9250L Datasheet

SFF9250L

Part	Datasheet
SFF9250L	SFF9250L (pdf)

PDF Datasheet Preview
Advanced Power MOSFET Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10uA Max. VDS=-200V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 °C Continuous Drain Current TC=100 °C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 °C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Junction-to-Ambient SFF9250L BVDSS = -200 V RDS on = ID = A TO-3PF 1.Gate Drain Source Value -200 ±20 990 90 - 55 to +150 Units V A V mJ A mJ V/ns W/ °C Typ. --- Max. 40 Units °C /W SFF9250L P-CHANNEL POWER MOSFET Electrical Characteristics TC=25°C unless otherwise specified Symbol BVDSS VGS th IGSS IDSS RDS on gfs Ciss Coss Crss td on

PDF Datasheet Preview

Advanced Power MOSFET

Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10uA Max. VDS=-200V Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic Drain-to-Source Voltage

Continuous Drain Current TC=25 °C

Continuous Drain Current TC=100 °C

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25 °C Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, from case for 5-seconds

Thermal Resistance

Characteristic Junction-to-Case Junction-to-Ambient

SFF9250L

BVDSS = -200 V RDS on = ID = A

TO-3PF
1.Gate Drain Source

Value -200 ±20 990 90
- 55 to +150

Units V

A V mJ A mJ V/ns W/ °C

Typ. ---

Max. 40

Units °C /W

SFF9250L

P-CHANNEL POWER MOSFET

Electrical Characteristics TC=25°C unless otherwise specified

Symbol BVDSS

VGS th

IGSS

IDSS

RDS on
gfs Ciss Coss Crss td on

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Datasheet ID: SFF9250L 634710