RURU8060

RURU8060 Datasheet

RURU8060

Part	Datasheet
RURU8060	RURU8060 (pdf)

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Data Sheet January 2002 RURU8060 80A, 600V Ultrafast Diode The RURU8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA09886. Ordering Information PACKAGE BRAND RURU8060 TO-218 RURU8060 NOTE When ordering, use the entire part number. • Switching Power Supplies • Power Switching Circuits • General Purpose Packaging JEDEC STYLE SINGLE LEAD TO-218 ANODE CATHODE FLANGE Absolute Maximum Ratings TC = 25oC, Unless Otherwise DC Blocking Voltage VR Average TC = 84oC Forward Current IF AV Repetitive Peak Surge Current IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ RURU8060 600 80 180 50 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation RURU8060 Electrical TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 80A IF = 80A, TC = 150oC VR = 600V VR = 600V, TC = 150oC IF = 1A, dIF/dt = 100A/µs IF = 80A, dIF/dt = 100A/µs IF = 80A, dIF/dt = 100A/µs IF = 80A, dIF/dt = 100A/µs oC/W DEFINITIONS D = Duty cycle. Typical Performance Curves 175oC 100 100oC 1000 100 10 175oC 100oC 10 25oC

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Data Sheet

January 2002

RURU8060
80A, 600V Ultrafast Diode

The RURU8060 is an ultrafast diode with soft recovery characteristics trr < 75ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly developmental type TA09886.
Ordering Information

PACKAGE

BRAND

RURU8060

TO-218

RURU8060
NOTE When ordering, use the entire part number.
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Packaging

JEDEC STYLE SINGLE LEAD TO-218

ANODE

CATHODE FLANGE

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

DC Blocking Voltage VR

Average TC = 84oC

Forward

Current

IF AV

Repetitive Peak Surge Current IFRM Square Wave, 20kHz

Nonrepetitive Peak Surge Current IFSM Halfwave, 1 Phase, 60Hz

Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ

RURU8060 600 80
180 50 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

RURU8060

Electrical TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 80A

IF = 80A, TC = 150oC

VR = 600V

VR = 600V, TC = 150oC

IF = 1A, dIF/dt = 100A/µs

IF = 80A, dIF/dt = 100A/µs

IF = 80A, dIF/dt = 100A/µs

IF = 80A, dIF/dt = 100A/µs
oC/W

DEFINITIONS

D = Duty cycle.

Typical Performance Curves
175oC 100
100oC
1000 100 10
175oC 100oC
10 25oC

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Datasheet ID: RURU8060 634699