RURU10060

RURU10060 Datasheet

RURU10060

Part	Datasheet
RURU10060	RURU10060 (pdf)

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Data Sheet January 2002 RURU10060 100A, 600V Ultrafast Diode The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly development type TA49019. Ordering Information PACKAGE BRAND RURU10060 TO-218 RURU10060 NOTE When ordering, use the entire part number. • Switching Power Supplies • Power Switching Circuits • General Purpose Packaging JEDEC STYLE SINGLE LEAD TO-218 ANODE CATHODE FLANGE Absolute Maximum Ratings TC = 25oC TC = 70oC Repetitive Peak Surge Current IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ RURU10060 600 100 1000 210 50 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation RURU10060 Electrical TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 100A IF = 100A, TC = 150oC VR = 600V VR = 600V, TC = 150oC IF = 1A, dIF/dt = 100A/µs IF = 100A, dIF/dt = 100A/µs IF = 100A, dIF/dt = 100A/µs IF = 100A, dIF/dt = 100A/µs oC/W DEFINITIONS D = Duty cycle. Typical Performance Curves 1000 175oC 175oC 10 100oC 25oC VF, FORWARD VOLTAGE V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE 100 100oC 25oC

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Data Sheet

January 2002

RURU10060
100A, 600V Ultrafast Diode

The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly development type TA49019.
Ordering Information

PACKAGE

BRAND

RURU10060

TO-218

RURU10060
NOTE When ordering, use the entire part number.
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Packaging

JEDEC STYLE SINGLE LEAD TO-218

ANODE

CATHODE FLANGE

Absolute Maximum Ratings TC = 25oC

TC = 70oC Repetitive Peak Surge Current IFRM

Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM

Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ

RURU10060 600 100
1000
210 50 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

RURU10060

Electrical TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 100A

IF = 100A, TC = 150oC

VR = 600V

VR = 600V, TC = 150oC

IF = 1A, dIF/dt = 100A/µs

IF = 100A, dIF/dt = 100A/µs

IF = 100A, dIF/dt = 100A/µs

IF = 100A, dIF/dt = 100A/µs
oC/W

DEFINITIONS

D = Duty cycle.

Typical Performance Curves
1000
175oC
175oC
10 100oC
25oC

VF, FORWARD VOLTAGE V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE
100 100oC
25oC

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Datasheet ID: RURU10060 634697