VUB116-16NO1

VUB116-16NO1 Datasheet

VUB 116-16NO1

Part	Datasheet
VUB116-16NO1	VUB116-16NO1 (pdf)

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VUB 116-16NO1 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data Part name Marking on product VUB116-16NO1 Rectifier Fast Recov. Diode Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = V IC80 = 67 A IFSM = 700 A IFSM = 200 A VCEsat = V 10+11 12 13 19+20 Features: • Soldering connections for PCB mounting • Convenient package outline • Optional NTC ~ 6+7 ~ 4+5 ~ 2+3 a s e - o u 8+9 18 17 21+22 E72873 hApplication: • Drive Inverters with brake system Package: kage • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability • UL registered, E72873 Recommended replacement VUB 116-16NOXT IXYS reserves the right to change limits, test conditions and dimensions. 2010 IXYS All rights reserved 20101007a VUB 116-16NO1 IGBT Symbol Definitions Conditions VCES VGES VGEM IC25 IC80 Ptot VCE sat VGE th ICES collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current Cies td on td off Eon Eoff Ordering Standard Part Name VUB 116-16NO1 Marking on Product Delivering Mode Base Qty Ordering Code VUB116-16NO1 496855 IXYS reserves the right to change limits, test conditions and dimensions. 2010 IXYS All rights reserved 20101007a VUB 116-16NO1 TVJ = 125°C TVJ = 45°C 400 TVJ = 25°C IF 90 IFSM 200 TVJ = 150°C I2t [A2s] TVJ= 45°C TVJ= 150°C 50Hz, 80% VRRM 2 3 4 5 6 7 89 VF [V] Fig. 1 Forward current vs. voltage drop per diode t [s] Fig. 2 Surge overload current 300 Ptot o [W] - 200 e 100 RthA: K/W K/W K/W K/W K/W K/W 20 40 60 80 100 0 20 40 60 80 100 120 140 a IdAVM [A] Tamb [°C] Fig. 4 Power dissipation versus direct output current h and ambient temperature, sine 180° t [ms] Fig. 3 I2t versus time per diode t160 u 140 100 IdAV [A] 60 0 20 40 60 80 100 120 140 TC [°C] Fig. 5 Max. forward current vs. case temperature ZthJC [K/W] t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. 2010 IXYS All rights reserved 20101007a

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VUB 116-16NO1

Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System

Preliminary data

Part name Marking on product VUB116-16NO1

Rectifier Fast Recov.

Diode

Diode

IGBT

VRRM = 1600 V VCES = 1200 V VCES = 1200 V

IdAVM = 116 A VF = V IC80 = 67 A

IFSM = 700 A IFSM = 200 A VCEsat = V
10+11 12
13 19+20

Features:
• Soldering connections for PCB mounting
• Convenient package outline
• Optional NTC
~ 6+7 ~ 4+5 ~ 2+3
a s e - o u 8+9
18 17 21+22

E72873
hApplication:
• Drive Inverters with brake system

Package:
kage
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
• UL registered, E72873

Recommended replacement VUB 116-16NOXT

IXYS reserves the right to change limits, test conditions and dimensions. 2010 IXYS All rights reserved
20101007a

VUB 116-16NO1

IGBT

Symbol Definitions

Conditions

VCES VGES VGEM IC25 IC80 Ptot VCE sat VGE th ICES
collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current
total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current

Cies
td on td off Eon Eoff
Ordering Standard

Part Name VUB 116-16NO1
Marking on Product Delivering Mode Base Qty Ordering Code

VUB116-16NO1
496855

IXYS reserves the right to change limits, test conditions and dimensions. 2010 IXYS All rights reserved
20101007a

VUB 116-16NO1

TVJ = 125°C

TVJ = 45°C 400

TVJ = 25°C

IF 90

IFSM 200

TVJ = 150°C

I2t [A2s]

TVJ= 45°C

TVJ= 150°C
50Hz, 80% VRRM
2 3 4 5 6 7 89

VF [V] Fig. 1 Forward current vs. voltage
drop per diode
t [s] Fig. 2 Surge overload current
300 Ptot
o [W] - 200 e 100

RthA:

K/W K/W K/W K/W K/W K/W
20 40 60 80 100 0 20 40 60 80 100 120 140
a IdAVM [A]

Tamb [°C]

Fig. 4 Power dissipation versus direct output current
h and ambient temperature, sine 180°
t [ms] Fig. 3 I2t versus time per diode
t160 u 140
100 IdAV
[A] 60
0 20 40 60 80 100 120 140 TC [°C] Fig. 5 Max. forward current vs. case temperature

ZthJC
[K/W]
t [s]

Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, test conditions and dimensions.
2010 IXYS All rights reserved
20101007a

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived VUB116-16NO1 Datasheet file may be downloaded here without warranties.

Datasheet ID: VUB116-16NO1 644489