RURP15100

RURP15100 Datasheet

RURP15100

Part	Datasheet
RURP15100	RURP15100 (pdf)

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Data Sheet January 2002 RURP15100 15A, 1000V Ultrafast Diode The RURP15100 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as a freewheel/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09906. Ordering Information PACKAGE BRAND RURP15100 TO-220AC RURP15100 NOTE When ordering, use the entire part number. • Switching Power Supply • Power Switching Circuits • General Purpose Packaging JEDEC TO-220AC ANODE CATHODE CATHODE FLANGE Absolute Maximum Ratings TC = 25oC, Unless Otherwise DC Blocking Voltage VR Average TC = 142oC Forward Current I F AV Repetitive Peak Surge Current IFRM Square Wave 20kHz Nonrepetitive Peak Surge Current .IFSM Halfwave 1 Phase 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ RURP15100 1000 15 100 20 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation RURP15100 Electrical TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 15A IF = 15A, TC = 150oC VR = 1000V VR = 1000V, TC = 150oC IF = 1A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs oC/W DEFINITIONS D = duty cycle. Typical Performance Curves TJ = 175oC TJ = 100oC TJ = 25oC VF, FORWARD VOLTAGE DROP V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE TJ = 150oC

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Data Sheet

January 2002

RURP15100
15A, 1000V Ultrafast Diode

The RURP15100 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.

This device is intended for use as a freewheel/clamping diode and in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor.

Formerly developmental type TA09906.
Ordering Information

PACKAGE

BRAND

RURP15100

TO-220AC

RURP15100
NOTE When ordering, use the entire part number.
• Switching Power Supply
• Power Switching Circuits
• General Purpose

Packaging

JEDEC TO-220AC ANODE CATHODE

CATHODE FLANGE

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

DC Blocking Voltage VR

Average TC = 142oC

Forward

Current

I F AV

Repetitive Peak Surge Current IFRM Square Wave 20kHz

Nonrepetitive Peak Surge Current .IFSM Halfwave 1 Phase 60Hz

Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ

RURP15100 1000 15
100 20 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

RURP15100

Electrical TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 15A

IF = 15A, TC = 150oC

VR = 1000V

VR = 1000V, TC = 150oC

IF = 1A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs
oC/W

DEFINITIONS

D = duty cycle.

Typical Performance Curves

TJ = 175oC

TJ = 100oC

TJ = 25oC

VF, FORWARD VOLTAGE DROP V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

TJ = 150oC

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Datasheet ID: RURP15100 634696