RMPA2453

RMPA2453 Datasheet

RMPA2453

Part	Datasheet
RMPA2453	RMPA2453 (pdf)

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RMPA2453 July 2004 RMPA2453 GHz InGaP HBT Linear Power Amplifier The RMPA2453 power amplifier is designed for high performance WLAN applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. • 26dB small signal gain • 26.5dBm output power 1dB compression • EVM at 18dBm modulated output power • EVM at 19dBm modulated output power • 3.3V single positive supply operation • Two power saving shutdown options bias and logic control • Integrated power detector with 20dB dynamic range • Low profile 16 pin 3 x 3 x mm leadless package • Internally matched to and DC blocked RF input/ output • Optimized for use in 802.11b/g applications Device Functional Block Diagram VM12 VDET REF VDET VC2 VL 1 RF IN 2 RF IN 3 BIAS VOLTAGE DETECTOR INPUT MATCH INT STG MATCH 12 N/C OUTPUT MATCH 11 RF OUT 10 RF OUT N/C 4 9 N/C Backside Ground VC1 N/C N/C N/C 2004 Fairchild Semiconductor Corporation VL logic RF IN RF IN RF OUT RF OUT VDET VDET REF VM12 RMPA2453 Absolute Ratings1 Symbol VC1, VC2 IC1, IC2 VM12 VL P IN TCASE TSTG Parameter Positive Supply Voltage Supply Current IC1 IC2 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Ratings 5 120 700 5 10 -40 to +85 -55 to +150 Notes 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values

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RMPA2453

July 2004

RMPA2453

GHz InGaP HBT Linear Power Amplifier

The RMPA2453 power amplifier is designed for high performance WLAN applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.
• 26dB small signal gain
• 26.5dBm output power 1dB compression
• EVM at 18dBm modulated output power
• EVM at 19dBm modulated output power
• 3.3V single positive supply operation
• Two power saving shutdown options bias and logic
control
• Integrated power detector with 20dB dynamic range
• Low profile 16 pin 3 x 3 x mm leadless package
• Internally matched to and DC blocked RF input/
output
• Optimized for use in 802.11b/g applications

Device

Functional Block Diagram

VM12 VDET REF VDET VC2

VL 1 RF IN 2 RF IN 3

BIAS

VOLTAGE DETECTOR

INPUT MATCH

INT STG MATCH
12 N/C

OUTPUT MATCH
11 RF OUT 10 RF OUT

N/C 4
9 N/C

Backside Ground

VC1 N/C N/C N/C
2004 Fairchild Semiconductor Corporation

VL logic

RF IN

RF IN

RF OUT

RF OUT

VDET

VDET REF

VM12

RMPA2453

Absolute Ratings1

Symbol VC1, VC2 IC1, IC2

VM12 VL P IN TCASE TSTG

Parameter Positive Supply Voltage Supply Current IC1 IC2 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature

Ratings 5
120 700
5 10 -40 to +85 -55 to +150

Notes 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values

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Datasheet ID: RMPA2453 634687