BFG 196 E6327

BFG 196 E6327 Datasheet

BFG196

Part	Datasheet
BFG 196 E6327	BFG 196 E6327 (pdf)

PDF Datasheet Preview
NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = GHz, F = dB at 900 MHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFG196 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFG196 Marking Pin Configuration BFG196 1 = E 2 = B 3 = E 4 = C - Package SOT223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 90°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 12 20 2 150 15 800 150 -65 150 -65 150 Value 75 Unit V mA mW °C Unit K/W 2007-04-20 1 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 50 mA, VCE = 8 V, pulse measured V BR CEO 12 ICES

PDF Datasheet Preview

NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to GHz at collector currents from
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = GHz, F = dB at 900 MHz
• Pb-free RoHS compliant package1
• Qualified according AEC Q101
* Short term description

BFG196

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BFG196

Marking

Pin Configuration

BFG196 1 = E 2 = B 3 = E 4 = C -

Package SOT223

Maximum Ratings

Parameter

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 90°C Junction temperature Ambient temperature Storage temperature

VCEO VCES VCBO VEBO IC IB Ptot

Tj TA Tstg

Thermal Resistance

Parameter

Junction - soldering point3

RthJS
1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Value 12 20 2 150 15 800
150 -65 150 -65 150

Value 75

Unit V
mA mW °C

Unit K/W
2007-04-20 1

BFG196

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 50 mA, VCE = 8 V, pulse measured

V BR CEO 12

ICES

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BFG196E6327 Datasheet file may be downloaded here without warranties.

Datasheet ID: BFG196E6327 637666