RFP30N06LE

RFP30N06LE Datasheet

RFP30N06LE, RF1S30N06LESM

Part	Datasheet
RFP30N06LE	RFP30N06LE (pdf)

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Data Sheet RFP30N06LE, RF1S30N06LESM January 2004 30A, 60V, ESD Rated, Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV Human Body Model of ESD. Formerly developmental type TA49027. Ordering Information PACKAGE BRAND RFP30N06LE TO-220AB P30N06LE RF1S30N06LESM TO-263AB 1S30N06L NOTE When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. • 30A, 60V • rDS ON = • 2kV ESD Protected • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current .ID Pulsed Drain Current Note 3 IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Electrostatic Discharge Rating, MIL-STD-883, Category B 2 . .ESD Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief Tpkg RFP30N06LE, RF1S30N06LESM 60 +10, -8 30 Refer to Peak Current Curve Refer to UIS Curve 96 2 -55 to 175 300 260 UNITS V A W/oC kV oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BVDSS ID = 250µA, VGS = 0V, Figure 11 VGS TH VGS = VDS, ID = 250µA, Figure 10

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Data Sheet

RFP30N06LE, RF1S30N06LESM

January 2004
30A, 60V, ESD Rated, Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

These transistors incorporate ESD protection and are designed to withstand 2kV Human Body Model of ESD.

Formerly developmental type TA49027.
Ordering Information

PACKAGE

BRAND

RFP30N06LE

TO-220AB

P30N06LE

RF1S30N06LESM TO-263AB
1S30N06L
NOTE When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
• 30A, 60V
• rDS ON =
• 2kV ESD Protected
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN

GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2004 Fairchild Semiconductor Corporation

RFP30N06LE, RF1S30N06LESM

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS

Continuous Drain Current .ID

Pulsed Drain Current Note 3 IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Electrostatic Discharge Rating, MIL-STD-883, Category B 2 . .ESD

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief Tpkg

RFP30N06LE, RF1S30N06LESM 60
+10, -8 30

Refer to Peak Current Curve Refer to UIS Curve 96 2 -55 to 175
300 260

UNITS V A

W/oC
kV oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

BVDSS ID = 250µA, VGS = 0V, Figure 11

VGS TH VGS = VDS, ID = 250µA, Figure 10

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Datasheet ID: RFP30N06LE 634670