NZT749

NZT749 Datasheet

NZT749

Part	Datasheet
NZT749	NZT749 (pdf)

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NZT749 NZT749 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuit where speed is important. • Sourced from process 5P. 3 2 1 SOT-223 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current DC - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Base 2, Collector Emitter Value -25 -35 - 55 ~ 150 Units V A °C NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO Collector-Emitter Voltage V BR CBO Collector-Base Voltage V BR EBO Emitter-Base Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics * IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VEB = -4V, IC = 0 DC Current Gain

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NZT749

NZT749

PNP Current Driver Transistor
• This device is designed for power amplifier, regulator and switching circuit where speed is important.
• Sourced from process 5P.
3 2 1 SOT-223

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current DC
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Base 2, Collector Emitter

Value -25 -35
- 55 ~ 150

Units V A °C

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO

Collector-Emitter Voltage

V BR CBO

Collector-Base Voltage

V BR EBO

Emitter-Base Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics *

IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VEB = -4V, IC = 0

DC Current Gain

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Datasheet ID: NZT749 634660