NDS9956A

NDS9956A Datasheet

NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDS9956A	NDS9956A (pdf)

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NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor February 1996 These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed. Features 3.7A, 30V. RDS ON = VGS = 10V High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. Absolute Maximum Ratings Symbol Parameter TA= 25°C unless otherwise noted VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1997 Fairchild Semiconductor Corporation NDS9956A 30 ± 20 ± ± 15 2 1 -55 to 150 78 40 Units V A W °C °C/W °C/W NDS9956A.SAM Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward

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NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor

February 1996

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.

Features 3.7A, 30V. RDS ON = VGS = 10V High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package.

Dual MOSFET in surface mount package.

Absolute Maximum Ratings

Symbol Parameter

TA= 25°C unless otherwise noted

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Note 1a

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case

Note 1
1997 Fairchild Semiconductor Corporation

NDS9956A 30 ± 20
± ± 15
2 1 -55 to 150
78 40

Units V A W
°C °C/W °C/W

NDS9956A.SAM

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

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Datasheet ID: NDS9956A 634632