NDS9435A

NDS9435A Datasheet


NDS9435A

Part Datasheet
NDS9435A NDS9435A NDS9435A (pdf)
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NDS9435A

January 2002

NDS9435A
30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V .
• Power management
• Load switch
• Battery protection
• A, V

RDS ON = 50 VGS = V RDS ON = 80 VGS = V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

DDDD DD

SO-8

Pin 1 SO-8

SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

NDS9435A

NDS9435A
13’’
5 6 7 8

Ratings
±25
1 to +175
50 125 25

Tape width 12mm
4 3 2 1

Units
°C/W °C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

NDS9435A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = µA

Breakdown Voltage Temperature Coefficient

ID = µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = V, VGS = 0 V

IGSSF IGSSR

VGS = 25 V, VGS = V

VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on
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Datasheet ID: NDS9435A 634625