NDS8426A

NDS8426A Datasheet

NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDS8426A	NDS8426A (pdf)

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January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. A, 20 V. RDS ON = VGS= V. RDS ON = VGS= V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Note 1a Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1998 Fairchild Semiconductor Corporation NDS8426A 20 ±8 30 1 -55 to 150 50 25 Units V A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward IGSSR ON CHARACTERISTICS Note 2 VGS th Gate Threshold Voltage VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V

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January 1998

NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

A, 20 V. RDS ON = VGS= V. RDS ON = VGS= V.

High density cell design for extremely low RDS ON .

High power and current handling capability in a widely used surface mount package.

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation

Note 1a

Note 1a Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case

Note 1
1998 Fairchild Semiconductor Corporation

NDS8426A 20 ±8 30 1
-55 to 150
50 25

Units V A W
°C °C/W °C/W

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

ON CHARACTERISTICS Note 2

VGS th

Gate Threshold Voltage

VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V

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Datasheet ID: NDS8426A 634610