NDS8410

NDS8410 Datasheet

NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDS8410	NDS8410 (pdf)

PDF Datasheet Preview
February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 10A, 30V. RDS ON = VGS = 10V RDS ON = VGS = 4.5V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Note 1a Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 1997 Fairchild Semiconductor Corporation NDS8410 30 20 ± 10 ± 50 1 -55 to 150 50 25 Units V A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward IGSSR ON CHARACTERISTICS Note 2 VGS th RDS ON Gate Threshold Voltage Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance

PDF Datasheet Preview

February 1996

NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features 10A, 30V. RDS ON = VGS = 10V RDS ON = VGS = 4.5V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation

Note 1a

Note 1a Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1
1997 Fairchild Semiconductor Corporation

NDS8410 30 20 ± 10 ± 50 1
-55 to 150
50 25

Units V A W
°C °C/W °C/W

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

ON CHARACTERISTICS Note 2

VGS th RDS ON

Gate Threshold Voltage Static Drain-Source On-Resistance

ID on

On-State Drain Current

Forward Transconductance

More datasheets: 10017251-192240ELF | 10017251-152240ELF | 10017251-112240ELF | 10017251-392240ELF | 10017251-232240ELF | 10017251-252240ELF | IRFP460_R4943 | TSP-D1CH2-C11 | IPB34CN10NGATMA1 | DEMME9SZA101

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NDS8410 Datasheet file may be downloaded here without warranties.

Datasheet ID: NDS8410 634608