IRFP460_R4943
IRFP460_R4943 Datasheet
IRFP460
| Part | Datasheet |
|---|---|
IRFP460_R4943 |
IRFP460_R4943 (pdf) |
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| Data Sheet January 2002 IRFP460 20A, 500V, Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17465. Ordering Information PACKAGE BRAND IRFP460 TO-247 IRFP460 NOTE When ordering, use the entire part number. • 20A, 500V • rDS ON = • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN TAB 2002 Fairchild Semiconductor Corporation IRFP460 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 .VDGR Continuous Drain Current ID TC = 100oC ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Linear Derating Factor Single Pulse Avalanche Energy Rating Note EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg IRFP460 500 20 12 80 ±20 250 960 -55 to 150 300 260 UNITS V A V W W/oC mJ oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to TJ = 125oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Internal Source Inductance BVDSS ID = 250µA, VGS = 0V Figure 10 VGS TH VGS = VDS, ID = 250µA IDSS VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TJ = 125oC ID ON VDS > ID ON x rDS ON MAX, VGS = 10V IGSS VGS = ±20V rDS ON ID = 11A, VGS = 10V Figures 8, 9 VDS 50V, IDS > 11A Figure 12 td ON VDD = 250V, ID = 21A, RGS = RD = VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature td OFF Qg TOT VGS = 10V, ID = 21A, VDS = x Rated BVDSS, IG REF = 1.5mA Figure Gate Charge is Essentially Independent of OperatingTemperature CISS VDS = 25V, VGS = 0V, f = 1MHz Figure 10 |
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