NDB7060L

NDB7060L Datasheet

NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

Part	Datasheet
NDB7060L	NDB7060L (pdf)

Related Parts	Information
NDP7060L	NDP7060L

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June 1996 NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 75A, 60V. RDS ON = VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS TH < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS ON . TO-220 and TO-263 D2PAK package for both through hole and surface mount applications. Absolute Maximum Ratings Symbol Parameter TC = 25°C unless otherwise noted NDP7060L VDSS Drain-Source Voltage VDGR Drain-Gate Voltage RGS < 1 VGSS Gate-Source Voltage - Continuous - Nonrepetitive tP < 50 µs Drain Current - Continuous - Pulsed Total Power Dissipation TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range 60 ± 20 ± 40 75 225 150 1 -65 to 175 NDB7060L Units V W/°C 1997 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions DRAIN-SOURCE AVALANCHE RATINGS Note 1 W DSS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 75 A Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 60 V, VGS = 0 V

PDF Datasheet Preview

June 1996

NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
75A, 60V. RDS ON = VGS = 5V

Low drive requirements allowing operation directly from logic drivers. VGS TH < 2.0V.

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.

High density cell design for extremely low RDS ON . TO-220 and TO-263 D2PAK package for both through hole and surface mount applications.

Absolute Maximum Ratings

Symbol Parameter

TC = 25°C unless otherwise noted NDP7060L

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage RGS < 1

VGSS

Gate-Source Voltage - Continuous
- Nonrepetitive tP < 50 µs

Drain Current - Continuous
- Pulsed

Total Power Dissipation TC = 25°C

Derate above 25°C

TJ,TSTG Operating and Storage Temperature Range
60 ± 20 ± 40 75 225 150 1 -65 to 175

NDB7060L

Units V

W/°C
1997 Fairchild Semiconductor Corporation

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter

Conditions

DRAIN-SOURCE AVALANCHE RATINGS Note 1

W DSS

Single Pulse Drain-Source Avalanche Energy

VDD = 25 V, ID = 75 A

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 60 V, VGS = 0 V

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Datasheet ID: NDB7060L 634601