NDC632P

NDC632P Datasheet


NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor

Part Datasheet
NDC632P NDC632P NDC632P (pdf)
PDF Datasheet Preview
June1996

NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
-2.7A, -20V. RDS ON = VGS = -4.5V RDS ON = VGS = -2.7V.

Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low RDS ON . Exceptional on-resistance and maximum DC current capability.

SuperSOTTM-6

Absolute Maximum Ratings Symbol Parameter

TA = 25°C unless otherwise noted

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage - Continuous

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation

Note 1a Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1
1997 Fairchild Semiconductor Corporation

NDC632P -20 -8 -10 1
-55 to 150
78 30

Units V A W
°C °C/W °C/W

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

ON CHARACTERISTICS Note 2

VGS th

Gate Threshold Voltage
More datasheets: 4HF156250Z4BACTGI | 4HF156250Z4AACXGI8 | 4HF156250Z4AACUGI8 | 4HF156250Z4AACTGI8 | KPP204A | SCE028LD2CM4S | MAX3785EVKIT | DAMC-7X2P-J-K87 | MIKROE-1795 | RCHLB193UBK1


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NDC632P Datasheet file may be downloaded here without warranties.

Datasheet ID: NDC632P 634590