RFG60P05E

RFG60P05E Datasheet

RFG60P05E

Part	Datasheet
RFG60P05E	RFG60P05E (pdf)

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Data Sheet January 2002 RFG60P05E 60A, 50V, Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits. Formerly developmental type TA09835. Ordering Information PACKAGE BRAND RFG60P05E TO-247 RFG60P05E NOTE When ordering, use the entire part number. • 60A, 50V • rDS ON = • Temperature Compensating Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 DRAIN BOTTOM SIDE METAL SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFG60P05E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Breakdown Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Note 3 Figure 5 .IDM Power Dissipation PD Derate above 25oC. Single Pulse Avalanche Rating Figure 6 EAS Electrostatic Discharge Rating. ESD MIL-STD-883, Category B 2 Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg RFG60P05E -50 -50 ±20 60 Refer to Peak Current Curve 215 Refer to UIS Curve 2 -55 to 175 300 260 UNITS V A W/oC W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BV DSS V GS TH I DSS I GSS r DS ON t ON t d ON tr t d OFF tF t OFF Q g TOT Q g -10 Q g TH C ISS C OSS C RSS R JA ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA VDS = -50V, VGS = 0V VDS = x Rated BVDSS, TC = 150oC VGS = ±20V ID = 60A, VGS = -10V Figure 9

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Data Sheet

January 2002

RFG60P05E
60A, 50V, Ohm, ESD Rated, P-Channel Power MOSFET

This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits.

Formerly developmental type TA09835.
Ordering Information

PACKAGE

BRAND

RFG60P05E

TO-247

RFG60P05E
NOTE When ordering, use the entire part number.
• 60A, 50V
• rDS ON =
• Temperature Compensating Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC STYLE TO-247

DRAIN BOTTOM SIDE METAL

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFG60P05E

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Breakdown Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current ID

Pulsed Drain Current Note 3 Figure 5 .IDM Power Dissipation PD

Derate above 25oC.

Single Pulse Avalanche Rating Figure 6 EAS Electrostatic Discharge Rating. ESD

MIL-STD-883, Category B 2

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg

RFG60P05E -50 -50 ±20 60

Refer to Peak Current Curve 215

Refer to UIS Curve 2
-55 to 175
300 260

UNITS V A

W/oC W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t d ON
tr t d OFF
tF t OFF Q g TOT Q g -10 Q g TH C ISS C OSS C RSS R JA

ID = 250µA, VGS = 0V

VGS = VDS, ID = 250µA

VDS = -50V, VGS = 0V VDS = x Rated BVDSS, TC = 150oC

VGS = ±20V

ID = 60A, VGS = -10V Figure 9

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Datasheet ID: RFG60P05E 634572