IXKN75N60C

IXKN75N60C Datasheet

IXKN 75N60C

Part	Datasheet
IXKN75N60C	IXKN75N60C (pdf)

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IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS on 36 mΩ miniBLOC, SOT-227 B S G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR RDSon VGSth IDSS IGSS Qg Qgs Qgd td on t td off tf VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VDS < VDSS IF 100A/µs TVJ = 150°C ID = 10 A L = 36 mH TC = 25°C ID = 20 A L = 5 µH TC = 25°C Maximum Ratings ±20 6 V/ns Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. VGS = 10 V ID = ID90 VDS = 20 V ID = 5 mA VDS = VDSS VGS = 0 V TVJ = 25°C TVJ = 125°C VGS = ±20 V VDS = 0 V VGS= 10 V VDS = 350 V ID = 100 A 30 36 mΩ 50 µA 200 nA VGS= 10 V VDS = 380 V; conduction V K/W • miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly • fast CoolMOS 1 power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness • Enhanced total power density • Switched mode power supplies SMPS • Uninterruptible power supplies UPS • Power factor correction PFC • Welding • Inductive heating 1 CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved 20080523a

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IXKN 75N60C

CoolMOS 1 Power MOSFET

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET

VDSS 600 V

ID25 75 A

RDS on 36 mΩ
miniBLOC, SOT-227 B S

G = Gate

D = Drain

S = Source

Either source terminal at miniBLOC can be used as main or kelvin source

MOSFET

Symbol VDSS VGS ID25 ID90 dv/dt

EAS EAR

RDSon VGSth IDSS

IGSS Qg Qgs Qgd td on t
td off tf VF RthJC

Conditions TVJ = 25°C to 150°C

TC = 25°C TC = 90°C VDS < VDSS IF 100A/µs TVJ = 150°C ID = 10 A L = 36 mH TC = 25°C ID = 20 A L = 5 µH TC = 25°C

Maximum Ratings
±20
6 V/ns

Conditions

Characteristic Values

TVJ = 25°C, unless otherwise specified min. typ. max.

VGS = 10 V ID = ID90 VDS = 20 V ID = 5 mA VDS = VDSS VGS = 0 V TVJ = 25°C

TVJ = 125°C VGS = ±20 V VDS = 0 V

VGS= 10 V VDS = 350 V ID = 100 A
30 36 mΩ
50 µA
200 nA

VGS= 10 V VDS = 380 V;
conduction

V K/W
• miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly
• fast CoolMOS 1 power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
• Switched mode power supplies SMPS
• Uninterruptible power supplies UPS
• Power factor correction PFC
• Welding
• Inductive heating
1 CoolMOS is a trademark of Infineon Technologies AG.

IXYS reserves the right to change limits, test conditions and dimensions. 2008 IXYS All rights reserved
20080523a

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Datasheet ID: IXKN75N60C 644315