RFP30P06

RFP30P06 Datasheet

RFG30P06, RFP30P06, RF1S30P06SM

Part	Datasheet
RFP30P06	RFP30P06 (pdf)

PDF Datasheet Preview
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Ordering Information PACKAGE BRAND RFG30P06 TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A. Packaging DRAIN BOTTOM SIDE METAL JEDEC STYLE TO-247 SOURCE DRAIN GATE • 30A, 60V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFG30P06, RFP30P06, RF1S30P06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 .VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage .VGS Continuous Drain Current ID Pulsed Drain Current Note 3 Figure 5 IDM Single Pulse Avalanche Rating Figure 6 EAS Power Dissipation PD Linear Deratlng Factor Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg RFG30P06, RFP30P06 RF1S30P06SM -60 -60 ±20 30 Refer to Peak Current Curve Refer to UIS Curve 135 -55 to 175 300 260 UNITS V A W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BV DSS V GS TH I DSS I GSS r DS ON t ON t d ON tr t d OFF tf t OFF Q g TOT Q g -10 Q g TH C ISS C OSS C RSS R JA ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA

PDF Datasheet Preview

RFG30P06, RFP30P06, RF1S30P06SM

Data Sheet

January 2002
30A, 60V, Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09834.
Ordering Information

PACKAGE

BRAND

RFG30P06

TO-247

RFG30P06

RFP30P06

TO-220AB

RFP30P06

RF1S30P06SM

TO-263AB

F1S30P06
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.

Packaging

DRAIN BOTTOM SIDE METAL

JEDEC STYLE TO-247

SOURCE DRAIN GATE
• 30A, 60V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2002 Fairchild Semiconductor Corporation

RFG30P06, RFP30P06, RF1S30P06SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Voltage Note 1 .VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage .VGS Continuous Drain Current ID

Pulsed Drain Current Note 3 Figure 5 IDM Single Pulse Avalanche Rating Figure 6 EAS Power Dissipation PD

Linear Deratlng Factor

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg

RFG30P06, RFP30P06 RF1S30P06SM -60 -60 ±20 30

Refer to Peak Current Curve Refer to UIS Curve 135 -55 to 175
300 260

UNITS V A

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t d ON
tr t d OFF
tf t OFF Q g TOT Q g -10 Q g TH C ISS C OSS C RSS R JA

ID = 250µA, VGS = 0V

VGS = VDS, ID = 250µA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RFP30P06 Datasheet file may be downloaded here without warranties.

Datasheet ID: RFP30P06 634569