RFP30P05

RFP30P05 Datasheet

RFG30P05, RFP30P05, RF1S30P05SM

Part	Datasheet
RFP30P05	RFP30P05 (pdf)

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RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Ordering Information PACKAGE BRAND RFG30P05 TO-247 RFG30P05 RFP30P05 TO-220AB RFP30P05 RF1S30P05SM TO-263AB F1S30P05 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A. Packaging JEDEC STYLE TO-247 DRAIN BOTTOM SIDE METAL SOURCE DRAIN GATE • 30A, 50V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFG30P05, RFP30P05, RF1S30P05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise RFG30P05, RFP30P05 RF1S30P05SM UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Note 3 Figure 5 IDM Power Dissipation PD Linear Derating Factor -50 -50 ±20 30 Refer to Peak Current Curve 120 W/oC Single Pulse Avalanche Rating Figure 6 EAS Refer to UIS Curve Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BV DSS V GS TH I DSS I GSS r DS ON

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RFG30P05, RFP30P05, RF1S30P05SM

Data Sheet

January 2002
30A, 50V, Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09834.
Ordering Information

PACKAGE

BRAND

RFG30P05

TO-247

RFG30P05

RFP30P05

TO-220AB

RFP30P05

RF1S30P05SM

TO-263AB

F1S30P05
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.

Packaging

JEDEC STYLE TO-247

DRAIN BOTTOM SIDE METAL

SOURCE DRAIN GATE
• 30A, 50V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2002 Fairchild Semiconductor Corporation

RFG30P05, RFP30P05, RF1S30P05SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

RFG30P05, RFP30P05 RF1S30P05SM

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS

Continuous Drain Current ID Pulsed Drain Current Note 3 Figure 5 IDM

Power Dissipation PD Linear Derating Factor
-50 -50 ±20 30 Refer to Peak Current Curve 120

W/oC

Single Pulse Avalanche Rating Figure 6 EAS

Refer to UIS Curve

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL

Package Body for 10s, See Techbrief 334 Tpkg

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

BV DSS V GS TH

I DSS

I GSS r DS ON

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Datasheet ID: RFP30P05 634568