IXGC16N60C2D1
IXGC16N60C2D1 Datasheet
IXGC 16N60C2
| Part | Datasheet |
|---|---|
IXGC16N60C2D1 |
IXGC16N60C2D1 (pdf) |
| Related Parts | Information |
|---|---|
IXGC16N60C2 |
IXGC16N60C2 |
| PDF Datasheet Preview |
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| HiPerFASTTM IGBT IXGC 16N60C2 C2-Class High Speed IXGC 16N60C2D1 IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Preliminary Data Sheet VCES IC25 VCE sat tfi typ = 600 V = 20 A = V = 35 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA RBSOA PC TJ TJM Tstg FC VISOL Weight VGE th ICES IGES VCE sat Test Conditions D1 Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C RGE = 1 Continuous ±20 Transient ±30 TC = 25°C TC = 110°C TC = 110°C IXGC16N60C2D1 diode TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Clamped inductive load TC = 25°C 10 100 ICM = 32 VCES -55 +150 -55 +150 Mounting Force Isolation Voltage 50/60Hz t = 1minute RMS 2500 Maximum lead temperature for soldering mm in. from case for 10 s W °C °C °C N/lb. V °C Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 12 A, VGE = 15 V Note 2 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 16N60C2 16N60C2D1 25 µA 50 µA TJ=125°C |
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