RFD16N05SM
RFD16N05SM Datasheet
RFD16N05, RFD16N05SM
| Part | Datasheet |
|---|---|
RFD16N05SM |
RFD16N05SM (pdf) |
| Related Parts | Information |
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RFD16N05 |
RFD16N05 |
| PDF Datasheet Preview |
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| Data Sheet RFD16N05, RFD16N05SM November 2003 16A, 50V, Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Ordering Information PACKAGE BRAND RFD16N05 RFD16N05SM TO-251AA TO-252AA D16N05 NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE • 16A, 50V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-252AA DRAIN FLANGE GATE SOURCE 2003 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05, RFD16N05SM, UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage Note VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Refer to Peak Current Curve Gate to Source Voltage .VGS ±20 Pulsed Avalanche Rating .EAS Refer to Figure 5 Power Dissipation PD Derate above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current BVDSS ID = 250µA, VGS = 0V Figure 11 VGS TH VGS = VDS, ID = 250µA IDSS VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TC = 150oC |
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