QSC133

QSC133 Datasheet

QSC133

Part	Datasheet
QSC133	QSC133 (pdf)

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PACKAGE DIMENSIONS REFERENCE SURFACE PLASTIC SILICON INFRARED PHOTODARLINGTON QSC133 EMITTER SQ. 2X NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. Orange stripe on the flange. SCHEMATIC COLLECTOR EMITTER The QSC133 is a silicon phototdarlington encapsulated in an infrared transparent, black T-1 package. • NPN Silicon Photodarlington • Package Type T-1 3mm lens diameter • Matched Emitter QECXXX • Narrow Reception Angle, 16° • Daylight Filter • Package material and color black epoxy • High Sensitivity 2001 Fairchild Semiconductor Corporation DS300359 7/12/01 1 OF 4 PLASTIC SILICON INFRARED PHOTODARLINGTON QSC133 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C PARAMETER TEST CONDITIONS Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown VCE = 10 V, Ee = 0 ICEO IC = 1 mA BVCEO Emitter-Collector Breakdown IE = 100 µA BVECO On-State Collector Current 5 Ee = mW/cm2, VCE = 5 V IC ON Saturation Voltage 5 Ee = mW/cm2, IC = mA VCE sat

PDF Datasheet Preview

PACKAGE DIMENSIONS

REFERENCE SURFACE

PLASTIC SILICON INFRARED PHOTODARLINGTON

QSC133

EMITTER

SQ. 2X

NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified. Orange stripe on the flange.

SCHEMATIC

COLLECTOR

EMITTER

The QSC133 is a silicon phototdarlington encapsulated in an infrared transparent, black T-1 package.
• NPN Silicon Photodarlington
• Package Type T-1 3mm lens diameter
• Matched Emitter QECXXX
• Narrow Reception Angle, 16°
• Daylight Filter
• Package material and color black epoxy
• High Sensitivity
2001 Fairchild Semiconductor Corporation DS300359 7/12/01
1 OF 4

PLASTIC SILICON INFRARED PHOTODARLINGTON

QSC133

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1

Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD

Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec
30 5 100

Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C

PARAMETER

TEST CONDITIONS

Peak Sensitivity Wavelength Reception Angle

Collector-Emitter Dark Current Collector-Emitter Breakdown

VCE = 10 V, Ee = 0

ICEO

IC = 1 mA

BVCEO

Emitter-Collector Breakdown

IE = 100 µA

BVECO

On-State Collector Current 5

Ee = mW/cm2, VCE = 5 V

IC ON

Saturation Voltage 5

Ee = mW/cm2, IC = mA

VCE sat

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Datasheet ID: QSC133 634529