HUFA76619D3ST

HUFA76619D3ST Datasheet

HUFA76619D3, HUFA76619D3S

Part	Datasheet
HUFA76619D3ST	HUFA76619D3ST (pdf)

Related Parts	Information
HUFA76619D3	HUFA76619D3
HUFA76619D3S	HUFA76619D3S

PDF Datasheet Preview
Data Sheet HUFA76619D3, HUFA76619D3S January 2002 18A, 100V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE HUFA76619D3 DRAIN FLANGE GATE SOURCE HUFA76619D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76619D3 TO-251AA 76619D HUFA76619D3S TO-252AA 76619D NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76619D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76619D3, HUFA76619D3S UNITS Drain to Source Voltage Note VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous 1220550ooCCoC,, ,VVVGGGSSS===1505VVV Figure 2 18 12 Continuous TC = 100oC, VGS = 4.5V Figure 2 ID Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC. 75 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2002 Fairchild Semiconductor Corporation HUFA76619D3, HUFA76619D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance

PDF Datasheet Preview

Data Sheet

HUFA76619D3, HUFA76619D3S

January 2002
18A, 100V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN FLANGE

SOURCE DRAIN GATE

HUFA76619D3

DRAIN FLANGE

GATE SOURCE

HUFA76619D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76619D3

TO-251AA
76619D

HUFA76619D3S

TO-252AA
76619D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA76619D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA76619D3, HUFA76619D3S

UNITS

Drain to Source Voltage Note VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous
1220550ooCCoC,, ,VVVGGGSSS===1505VVV

Figure 2
18 12

Continuous TC = 100oC, VGS = 4.5V Figure 2 ID

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and Storage Temperature. TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC.
75 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2002 Fairchild Semiconductor Corporation

HUFA76619D3, HUFA76619D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

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Datasheet ID: HUFA76619D3ST 634016