MMBT4355
MMBT4355 Datasheet
PN4355 / MMBT4355
| Part | Datasheet |
|---|---|
MMBT4355 |
MMBT4355 (pdf) |
| Related Parts | Information |
|---|---|
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PN4355 |
PN4355 |
| PDF Datasheet Preview |
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| PN4355 / MMBT4355 PN4355 MMBT4355 TO-92 SOT-23 Mark 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4355 625 *MMBT4355 350 *Device mounted on FR-4 PCB X Units mW/°C °C/W °C/W 2001 Fairchild Semiconductor Corporation PN4355 / MMBT4355 PNP General Purpose Amplifier continued Electrical Characteristics |
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