PN3568_D26Z

PN3568_D26Z Datasheet

PN3568

Part	Datasheet
PN3568_D26Z	PN3568_D26Z (pdf)

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PDF Datasheet Preview
PN3568 PN3568 NPN General Purpose Amplifier • This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500mA. TO-92 Emitter Base Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. Value 60 80 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V A °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO V BR CBO V BR EBO ICBO Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 75°C VEB = 4V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics VCE = 1.0V, IC = 30mA VCE = 1.0V, IC = 150mA IC = 150mA, IB = 15mA VCE = 1.0V, IC = 150mA Output Capacitance Input Capacitance Small Signal Current Gain

PDF Datasheet Preview

PN3568

PN3568

NPN General Purpose Amplifier
• This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500mA.

TO-92

Emitter Base Collector

Absolute Maximum Ratings* TA=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

Value 60 80
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V A °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO V BR CBO V BR EBO ICBO

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics

IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 75°C VEB = 4V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage VBE on Base-Emitter On Voltage Small Signal Characteristics

VCE = 1.0V, IC = 30mA VCE = 1.0V, IC = 150mA

IC = 150mA, IB = 15mA

VCE = 1.0V, IC = 150mA

Output Capacitance

Input Capacitance

Small Signal Current Gain

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Datasheet ID: PN3568_D26Z 634489