L14G3

L14G3 Datasheet

L14G1 L14G2 L14G3

Part	Datasheet
L14G3	L14G3 (pdf)

Related Parts	Information
L14G2	L14G2
L14G1	L14G1

PDF Datasheet Preview
HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS L14G1 L14G2 L14G3 13 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. SCHEMATIC CONNECTED TO CASE COLLECTOR 3 BASE 2 1 EMITTER The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package. • Hermetically sealed package • Narrow reception angle 2001 Fairchild Semiconductor Corporation DS300307 6/01/01 1 OF 4 HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 5 300 600 Unit °C °C °C °C NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14G1 On-State Collector Current L14G2 On-State Collector Current L14G3 Turn-On Time Turn-Off Time Saturation Voltage TEST CONDITIONS SYMBOL MIN UNITS IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 IC = 2 mA, VCC = 10 V, RL =100 IC = 2 mA, VCC = 10 V, RL =100 IC = mA, Ee = mW/cm2 7,8 BVCEO BVEBO BVCBO ICEO IC ON IC ON IC ON toff VCE SAT

PDF Datasheet Preview

HERMETIC SILICON PHOTOTRANSISTOR

PACKAGE DIMENSIONS

L14G1 L14G2 L14G3
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

CONNECTED TO CASE COLLECTOR 3

BASE 2
1 EMITTER

The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package.
• Hermetically sealed package
• Narrow reception angle
2001 Fairchild Semiconductor Corporation DS300307 6/01/01
1 OF 4

HERMETIC SILICON PHOTOTRANSISTOR

L14G1 L14G2 L14G3

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR TSTG TSOL-I TSOL-F

VCEO VCBO VEBO

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
45 5 300 600

Unit °C °C °C °C

NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14G1 On-State Collector Current L14G2 On-State Collector Current L14G3 Turn-On Time Turn-Off Time Saturation Voltage

TEST CONDITIONS

SYMBOL MIN

UNITS

IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0

Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 IC = 2 mA, VCC = 10 V, RL =100 IC = 2 mA, VCC = 10 V, RL =100 IC = mA, Ee = mW/cm2 7,8

BVCEO

BVEBO

BVCBO

ICEO

IC ON

IC ON

IC ON
toff

VCE SAT

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Datasheet ID: L14G3 634281