PN3563_D74Z
PN3563_D74Z Datasheet
PN3563
| Part | Datasheet |
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PN3563_D74Z |
PN3563_D74Z (pdf) |
| Related Parts | Information |
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PN3563_D75Z |
PN3563_D75Z |
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PN3563_D26Z |
PN3563_D26Z |
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PN3563 |
PN3563 |
| PDF Datasheet Preview |
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| PN3563 PN3563 TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the mA to 30 mA range. Sourced from Process See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 15 30 50 -55 to +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN3563 350 125 Units V mA °C Units mW /°C °C/W °C/W 1997 Fairchild Semiconductor Corporation PN3563 Electrical Characteristics Parameter TA= 25°C unless otherwise noted Test Conditions NPN RF Amplifier continued Min Max Units OFF CHARACTERISTICS |
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