PTF210101M V1

PTF210101M V1 Datasheet

PTF210101M

Part	Datasheet
PTF210101M V1	PTF210101M V1 (pdf)

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PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 2170 MHz The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. PTF210101M Package PG-RFP-10 Adjacent Channel Power Ratio dBc Drain Efficiency % Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 180 mA, = 2170 MHz, 3GPP WCDMA signal, P/A R = 8 dB, MHz bandwidth Efficiency ACPR 10 Average Output Power dBm • Typical WCDMA performance - Average output power = W - Gain = 15 dB - Efficiency = 20% - ACPR = dB • Typical CW performance - Output Power at = 10 W - Gain = 14 dB - Efficiency = 50% • Integrated ESD protection Human Body Model Class 1 minimum • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR 28 V, 10 W CW output power • Pb-free and RoHS compliant RF Characteristics Two-Tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 8 PTF210101M DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance TCASE = 70°C, 10 W DC Ordering Information Type PTF210101M Package Outline PG-RFP-10 Symbol V BR DSS IDSS RDS on VGS IGSS Min 65 Unit V µA V µA Symbol VDSS VGS TJ PD TSTG Value 65 to +12 150 19 to +150 Unit V °C W W/°C °C °C/W Package Description Molded plastic, SMD Marking 0211 See Infineon distributor for future availability. Data Sheet 2 of 8 PTF210101M Typical Performance data taken in production test fixture Gain dB Power Sweep, CW Conditions VDD = 28 V, IDQ = 180 mA, = 2170 MHz Efficiency 16 15 Gain 11 15 Output Power dBm 60 50 40 30 20 10 0 45 Drain Efficiency % Intermodulation Distortion dBc Two-Tone Drive-up VDD = 28 V, IDQ = 180 mA, = 2169, = 2170 MHz -80 26 28 30 32 34 36 38 40 42 Output Power, PEP dBm Input Return Loss dB Gain dB Two-Tone Power Sweep VDD = 28 V, IDQ = 180 m A, = 2169, = 2170 MHz 16 15 14 13 12 11 Gain Efficiency 0 28 30 32 34 36 38 40 42 Output Power, PEP dBm

PDF Datasheet Preview

PTF210101M

High Power RF LDMOS Field Effect Transistor 10 W, 2110 2170 MHz

The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

PTF210101M Package PG-RFP-10

Adjacent Channel Power Ratio dBc Drain Efficiency %

Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 180 mA, = 2170 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, MHz bandwidth

Efficiency

ACPR 10

Average Output Power dBm
• Typical WCDMA performance - Average output power = W - Gain = 15 dB - Efficiency = 20% - ACPR = dB
• Typical CW performance - Output Power at = 10 W - Gain = 14 dB - Efficiency = 50%
• Integrated ESD protection Human Body Model Class 1 minimum
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR 28 V, 10 W CW output power
• Pb-free and RoHS compliant

RF Characteristics

Two-Tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 2170 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ

Unit dB % dBc

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 8

PTF210101M

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V

Maximum Ratings

Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation

Above 25°C derate by Storage Temperature Range Thermal Resistance TCASE = 70°C, 10 W DC
Ordering Information

Type PTF210101M

Package Outline PG-RFP-10

Symbol V BR DSS

IDSS RDS on

VGS IGSS

Min 65

Unit V µA V µA

Symbol VDSS VGS TJ PD

TSTG

Value 65
to +12 150 19
to +150

Unit V °C W

W/°C °C
°C/W

Package Description Molded plastic, SMD

Marking 0211
*See Infineon distributor for future availability. Data Sheet
2 of 8

PTF210101M

Typical Performance data taken in production test fixture

Gain dB

Power Sweep, CW Conditions VDD = 28 V, IDQ = 180 mA, = 2170 MHz

Efficiency 16
15 Gain
11 15

Output Power dBm
60 50 40 30 20 10 0 45

Drain Efficiency % Intermodulation Distortion dBc

Two-Tone Drive-up VDD = 28 V, IDQ = 180 mA, = 2169, = 2170 MHz
-80 26 28 30 32 34 36 38 40 42

Output Power, PEP dBm

Input Return Loss dB

Gain dB

Two-Tone Power Sweep VDD = 28 V, IDQ = 180 m A, = 2169, = 2170 MHz
16 15 14 13 12 11

Gain

Efficiency
0 28 30 32 34 36 38 40 42

Output Power, PEP dBm

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Datasheet ID: PTF210101MV1 638489