MUR3020PT

MUR3020PT Datasheet

MUR3020PT, RURH1520CC

Part	Datasheet
MUR3020PT	MUR3020PT (pdf)

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Data Sheet MUR3020PT, RURH1520CC January 2002 15A, 200V Ultrafast Dual Diodes The MUR3020PT and RURH1520CC are ultrafast dual diodes trr < 30ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits thus reducing power loss in the switching transistor. Formerly developmental type TA09926. Ordering Information PACKAGE BRAND MUR3020PT TO-218AC MUR3020PT RURH1520CC TO-218AC RURH1520C NOTE When ordering, use the entire part number. • Switching Power Supply • Power Switching Circuits • General Purpose Packaging JEDEC TO-218AC CATHODE FLANGE ANODE1 CATHODE ANODE2 Absolute Maximum Ratings Per Leg TC = 25oC MUR3020PT, RUR1520CC DC Blocking Voltage VR Average Forward Current .IF AV TC = 157oC Repetitive Peak Surge Current IFRM Square Wave 20kHz Nonrepetitive Peak Surge Current IFSM Halfwave 1 Phase 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ 100 20 -55 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation MUR3020PT, RURH1520CC Electrical Per Leg TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 15A IF = 15A, TC = 150oC VR = 200V VR = 200V, TC = 150oC IF = 1A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs IF = 15A, dIF/dt = 100A/µs oC/W DEFINITIONS D = duty cycle. Typical Performance Curves 175oC 10 100oC 25oC VF, FORWARD VOLTAGE V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

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Data Sheet

MUR3020PT, RURH1520CC

January 2002
15A, 200V Ultrafast Dual Diodes

The MUR3020PT and RURH1520CC are ultrafast dual diodes trr < 30ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

These devices are intended for use as energy steering/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits thus reducing power loss in the switching transistor.

Formerly developmental type TA09926.
Ordering Information

PACKAGE

BRAND

MUR3020PT

TO-218AC

MUR3020PT

RURH1520CC

TO-218AC

RURH1520C
NOTE When ordering, use the entire part number.
• Switching Power Supply
• Power Switching Circuits
• General Purpose

Packaging

JEDEC TO-218AC

CATHODE FLANGE

ANODE1 CATHODE

ANODE2

Absolute Maximum Ratings Per Leg TC = 25oC

MUR3020PT, RUR1520CC

DC Blocking Voltage VR

Average Forward Current .IF AV

TC = 157oC

Repetitive Peak Surge Current IFRM

Square Wave 20kHz

Nonrepetitive Peak Surge Current IFSM

Halfwave 1 Phase 60Hz

Maximum Power Dissipation PD Avalanche Energy See Figures 7 and 8 EAVL Operating and Storage Temperature TSTG, TJ
100 20 -55 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

MUR3020PT, RURH1520CC

Electrical Per Leg TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 15A

IF = 15A, TC = 150oC

VR = 200V

VR = 200V, TC = 150oC

IF = 1A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs

IF = 15A, dIF/dt = 100A/µs
oC/W

DEFINITIONS

D = duty cycle.

Typical Performance Curves
175oC 10
100oC 25oC

VF, FORWARD VOLTAGE V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

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Datasheet ID: MUR3020PT 634478