MPS6513_D74Z

MPS6513_D74Z Datasheet

MPS6513 NPN General Purpose Amplifier

Part	Datasheet
MPS6513_D74Z	MPS6513_D74Z (pdf)

Related Parts	Information
MPS6513	MPS6513
MPS6513_D26Z	MPS6513_D26Z

PDF Datasheet Preview
MPS6513 NPN General Purpose Amplifier MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces September 2007 TO-92 Emitter Base Collector Absolute Maximum Ratings TC=25°C unless otherwise noted VCBO VCEO VEBO IC TJ, TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Value 40 30 4 200 -55 ~ 150 Units V mA °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB X Max. 625 200 Units mW/°C °C/W °C/W Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Cut-off Current IC = 10 uA IC = mA IE = 10 uA VCB = 30 V, T = 25 °C T = 60 °C VCE sat Cob DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance VCE = 10V, IC = 2mA VCE = 10V, IC = 100mA

PDF Datasheet Preview

MPS6513 NPN General Purpose Amplifier

MPS6513 NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
• Sourced from Proces

September 2007

TO-92

Emitter Base Collector

Absolute Maximum Ratings TC=25°C unless otherwise noted

VCBO VCEO VEBO IC TJ, TSTG

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Value
40 30 4 200 -55 ~ 150

Units

V mA °C

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

Max.
625 200

Units
mW/°C °C/W °C/W

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO

ICBO

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Collector-Base Cut-off Current

IC = 10 uA

IC = mA IE = 10 uA VCB = 30 V, T = 25 °C

T = 60 °C

VCE sat Cob

DC Current Gain

Collector-Emitter Saturation Voltage Output Capacitance

VCE = 10V, IC = 2mA VCE = 10V, IC = 100mA

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Datasheet ID: MPS6513_D74Z 634437