MMBT5770
MMBT5770 Datasheet
MMBT5770 NPN RF Transistor
| Part | Datasheet |
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MMBT5770 |
MMBT5770 (pdf) |
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| MMBT5770 NPN RF Transistor MMBT5770 NPN RF Transistor February 2008 • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the mA to 30 mA range. • Sourced from process SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 15 10 -55 to +150 Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient * Device mounted on FR-4PCB x Max. 225 556 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CBO Collector-Base Breakdown Voltage VCEO sus Collector-Emitter Sustaining Voltage* V BR EBO Emitter-Base Breakdown Voltage ICBO Collector-Cutoff Current On Characteristics * IC = uA, IE = 0 IC = mA, IB = 0 IE = 10 uA, IC = 0 VCB = 15 V, IE = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics VCE = 1.0V, IC = 3.0mA IC = 10mA, IB = 1.0mA IC = 10mA, IB = 1.0mA Current Gain Bandwidth Product * Pulse Test Pulse Duty IC = 4.0mA, VCE = 10V, f = 100MHz Min. 30 15 3 Units |
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