MMBT4401K
MMBT4401K Datasheet
MMBT4401K NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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MMBT4401K |
MMBT4401K (pdf) |
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| MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor November 2006 Marking SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Operating Junction and Storage Temperature Range Value 60 40 6 600 350 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO IBEV ICEX hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain * VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty IC = 100µA, IE = 0 IC = 1.0mA, IB = 0 IE = 100µA, IC = 0 VCE = 35V, VEB = 0.4V VCE = 35V, VEB = 0.4V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC= 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 10V, f = 100MHz VCB=5V, IE=0, f=100KHz VCC = 30V, VBE = 2V IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA IB1 = IB2 = 15mA Min. 60 40 6 20 40 80 100 40 |
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