MMBT4356
MMBT4356 Datasheet
MMBT4356
| Part | Datasheet |
|---|---|
MMBT4356 |
MMBT4356 (pdf) |
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| MMBT4356 MMBT4356 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. • Sourced from process • See TN4033A for characteristics. Absolute Maximum Ratings * TA=25°C unless otherwise noted Parameter VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector current - Continuous TJ, Tstg Operating and Storate Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired SOT-23 1 Mark 82 Base Emitter Collector Value -80 -80 -800 -55 ~ +150 Units V mA °C NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 350 357 Units mW/°C °C/W 2002 Fairchild Semiconductor Corporation MMBT4356 Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage |
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