L14N1

L14N1 Datasheet

L14N1 L14N2

Part	Datasheet
L14N1	L14N1 (pdf)

Related Parts	Information
L14N2	L14N2

PDF Datasheet Preview
HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS DIA. 13 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. L14N1 L14N2 SCHEMATIC CONNECTED TO CASE COLLECTOR 3 BASE 2 1 EMITTER The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package. • Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 HERMETIC SILICON PHOTOTRANSISTOR L14N1 L14N2 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 Unit °C °C °C °C NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Collector-Base leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14N1 On-State Collector Current L14N2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14N1 Saturation Voltage L14N2 TEST CONDITIONS SYMBOL MIN UNITS IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 VCB = 25 V, Ee = 0 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCB = 5 V 7,8 IC = 10 mA, VCC = 5 V, RL =100 IC = 10 mA, VCC = 5 V, RL =100 IC = mA, Ee = mW/cm2 7,8 IC = mA, Ee = mW/cm2 7,8 BVCEO BVEBO BVCBO ICEO ICBO IC ON IC ON ICB ON

PDF Datasheet Preview

HERMETIC SILICON PHOTOTRANSISTOR

PACKAGE DIMENSIONS

DIA.
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

L14N1 L14N2

SCHEMATIC

CONNECTED TO CASE COLLECTOR 3

BASE 2 1

EMITTER

The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
• Hermetically sealed package
• Wide reception angle
• Device can be used as a photodiode by using the collector and base leads.
2001 Fairchild Semiconductor Corporation DS300308 6/01/01
1 OF 4

HERMETIC SILICON PHOTOTRANSISTOR

L14N1 L14N2

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR TSTG TSOL-I TSOL-F

VCEO VCBO VEBO

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
30 40 5 300 600

Unit °C °C °C °C

NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Collector-Base leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14N1 On-State Collector Current L14N2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14N1 Saturation Voltage L14N2

TEST CONDITIONS

SYMBOL MIN

UNITS

IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 VCB = 25 V, Ee = 0

Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCE = 5 V 7,8 Ee = mW/cm2, VCB = 5 V 7,8 IC = 10 mA, VCC = 5 V, RL =100 IC = 10 mA, VCC = 5 V, RL =100 IC = mA, Ee = mW/cm2 7,8 IC = mA, Ee = mW/cm2 7,8

BVCEO

BVEBO

BVCBO

ICEO

ICBO

IC ON

IC ON

ICB ON

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Datasheet ID: L14N1 634282