MRF9210R3
MRF9210R3 Datasheet
Document Number MRF9210 Rev. 6, 9/2008
| Part | Datasheet |
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MRF9210R3 |
MRF9210R3 (pdf) |
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| ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with quencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 1900 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Power 40 Watts Gain dB Channel Power kHz dBc in 30 kHz BW MHz -60 dBc in 30 kHz BW • Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 40 Watts CW Output Power • Internally Matched for Ease of Use • Device Designed for Push-Pull Operation Only • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9210R3 880 MHz, 200 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375G-04, STYLE 1 NI-860C3 Table Maximum Ratings Rating Value Unit Drain-Source Voltage Gate-Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C VDSS VGS PD W/°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics Characteristic Tstg TC TJ to +150 200 Value 1 °C °C °C Unit Thermal Resistance, Junction to Case Table ESD Protection Characteristics °C/W Test Conditions Class Human Body Model 1 Minimum Machine Model M3 Minimum Charge Device Model C5 Minimum MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Freescale Semiconductor, Inc., All rights reserved. RF Device Data Freescale Semiconductor |
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