KST4125MTF
KST4125MTF Datasheet
KST4125
| Part | Datasheet |
|---|---|
KST4125MTF |
KST4125MTF (pdf) |
| PDF Datasheet Preview |
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| KST4125 KST4125 General Purpose Transistor SOT-23 1 Base Emitter Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Power Dissipation TSTG Storage Temperature • Refer to KST3906 for graphs Value -30 -30 -4 -200 350 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain VCE sat VBE sat fT * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC= -10µA, IE=0 IC= -1mA, IE=0 IE= -10µA, IC=0 VCB= -20V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -2.0mA VCE= -1V, IC= -50mA IC= -50mA, IB= -5.0mA IC= -50mA, IB= -5.0mA IC= -10mA, VCE= -20V f=100MHz Output Capacitance Noise Figure * Pulse Test Duty VCB= -5V, IE=0, f=100KHz IC= -100µA, VCE= -5V f=10Hz to 15.7KHz Min. Max. Units Marking 2002 Fairchild Semiconductor Corporation KST4125 Package Dimensions SOT-23 0.97REF |
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