KSP6521BU

KSP6521BU Datasheet


KSP6520/6521

Part Datasheet
KSP6521BU KSP6521BU KSP6521BU (pdf)
Related Parts Information
KSP6520BU KSP6520BU KSP6520BU
KSP6521NBU KSP6521NBU KSP6521NBU
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KSP6520/6521

KSP6520/6521

Amplifier Transistor
• Collector-Emitter Voltage VCEO=25V
• Collector Power Dissipation PC max =625mW

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCEO BVEBO ICBO

Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current

DC Current Gain

KSP6520 KSP6521 KSP6520 KSP6521

IC=0.5mA, IB=0 IC=10, IC=0 VCB=30V, IE=0 VCE=20V, IE=0

IC=100µA, VCE=10V

IC=2mA, VCE=10V

VCE sat Cob

Collector-Emitter Saturation Voltage Output Capacitance

IC=50mA, IB=5mA

VCB=10V, IE=0 f=100KHz

Noise Figure

IC=10µA, VCE=5V f=10Hz to 10KHz

TO-92

Emitter Base Collector

Value 40 25 4 100 625 150
-55 ~ 150

Units V mA
mW °C °C

Min. 25 4
100 150 200 300

Typl

Max.

Units V nA
400 600
2002 Fairchild Semiconductor Corporation

KSP6520/6521

Package Dimensions

TO-92
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Datasheet ID: KSP6521BU 634266