KSP6520/6521
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KSP6521BU (pdf) |
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KSP6520BU |
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KSP6521NBU |
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KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage VCEO=25V • Collector Power Dissipation PC max =625mW NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current DC Current Gain KSP6520 KSP6521 KSP6520 KSP6521 IC=0.5mA, IB=0 IC=10, IC=0 VCB=30V, IE=0 VCE=20V, IE=0 IC=100µA, VCE=10V IC=2mA, VCE=10V VCE sat Cob Collector-Emitter Saturation Voltage Output Capacitance IC=50mA, IB=5mA VCB=10V, IE=0 f=100KHz Noise Figure IC=10µA, VCE=5V f=10Hz to 10KHz TO-92 Emitter Base Collector Value 40 25 4 100 625 150 -55 ~ 150 Units V mA mW °C °C Min. 25 4 100 150 200 300 Typl Max. Units V nA 400 600 2002 Fairchild Semiconductor Corporation KSP6520/6521 Package Dimensions TO-92 |
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