KSK30OBU

KSK30OBU Datasheet

KSK30

Part	Datasheet
KSK30OBU	KSK30OBU (pdf)

Related Parts	Information
KSK30RBU	KSK30RBU
KSK30YTA	KSK30YTA
KSK30YBU	KSK30YBU

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KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance IGSS=1nA MAX • Low Noise NF=0.5dB TYP • High Voltage VGDS= -50V TO-92 Source Gate Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VGDS IG PD TJ TSTG Gate-Drain Voltage Gate-Current Collector Dissipation Junction Temperature Storage Temperature Ratings -50 10 100 125 -55 ~ 125 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVGDS IGSS IDSS VGS off Ciss Crss Gate-Drain Breakdown Voltage Gate Leak Current Drain Leak Current Gate-Source Voltage Forward Transfer Admittance Input Capacitance Feedback Capacitance VDS=0, IG= -100µA VGS= -30V, VDS=0 VDS=10V, VGS=0 VDS=10V, ID=0.1µA VDS=10V, VGS=0, f=1KHz VDS=0, VGS=0, f=1MHz VGD=10V, VDS=0 f=1MHz Noise Figure VDS=15V, VGS=0 f=120Hz Min. -50 Typ. Max. -1 -5 Units V nA mA V mS pF IDSS Classification Classification IDSS mA 2002 Fairchild Semiconductor Corporation Typical Characteristics ID[mA], DRAIN CURRENT V DS = 0V VGS = 0V VGS = -0.2V VGS = -0.4V VGS = -0.6V VGS = -0.8V VGS = -1.2V VGS = -1.4V VGS = -1.6V VGS[V], DRAIN-SOURCE VOLTAGE

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KSK30

KSK30

Low Noise PRE-AMP. Use
• High Input Impedance IGSS=1nA MAX
• Low Noise NF=0.5dB TYP
• High Voltage VGDS= -50V

TO-92

Source Gate Drain

Silicon N-channel Junction Fet

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VGDS IG PD TJ TSTG

Gate-Drain Voltage Gate-Current Collector Dissipation Junction Temperature Storage Temperature

Ratings -50 10 100 125
-55 ~ 125

Units V mA
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVGDS IGSS IDSS VGS off Ciss Crss

Gate-Drain Breakdown Voltage Gate Leak Current Drain Leak Current Gate-Source Voltage Forward Transfer Admittance Input Capacitance Feedback Capacitance

VDS=0, IG= -100µA VGS= -30V, VDS=0 VDS=10V, VGS=0 VDS=10V, ID=0.1µA VDS=10V, VGS=0, f=1KHz VDS=0, VGS=0, f=1MHz VGD=10V, VDS=0 f=1MHz

Noise Figure

VDS=15V, VGS=0 f=120Hz

Min. -50

Typ.

Max.
-1 -5

Units V nA mA V mS pF

IDSS Classification

Classification IDSS mA
2002 Fairchild Semiconductor Corporation

Typical Characteristics

ID[mA], DRAIN CURRENT V DS = 0V

VGS = 0V

VGS = -0.2V

VGS = -0.4V

VGS = -0.6V

VGS = -0.8V

VGS = -1.2V VGS = -1.4V VGS = -1.6V

VGS[V], DRAIN-SOURCE

VOLTAGE

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Datasheet ID: KSK30OBU 634259