KSD5018PWD

KSD5018PWD Datasheet


KSD5018

Part Datasheet
KSD5018PWD KSD5018PWD KSD5018PWD (pdf)
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KSD5018

KSD5018

Built-in Resistor at B-E for Motor Drive
• High Voltage Power Darlington TR

TO-220
1.Base 2.Collector 3.Emitter

NPN Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector- Base Voltage Collector- Emitter Voltage Emitter Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature
- 55 ~ 150

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

VCEO sus BVCER ICES IEBO VCE sat

VBE sat

Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 1.5A, IB = 0.05A, L = 25mH IC = 1mA, RBE = VCE = 500V V EB= 10V, IC = 0 IC = 2A, IB = 5mA IC = 3A, IB = 20mA IC = 2A, IB = 5mA

Min. 275 600

Max.

Units V mA V
2000 Fairchild Semiconductor International

KSD5018

Typical Characteristics
hFE, DC CURRENT GAIN
10000

V = 5V CE
1000

I [A], COLLECTOR CURRENT

Figure Static Characteristic
1000

VBE sat , VCE sat [V], SATURATION VOLTAGE

I = 400 I

VBE sat
1 VCE sat

IC[A], COLLECTOR CURRENT

Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
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Datasheet ID: KSD5018PWD 634246